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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2921
DESCRIPTION With MT-200 package Complement to type 2SA1215 APPLICATIONS Audio and general purpose
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg
Collector-base voltage

PARAMETER
Collector-emitter voltage
INC
Emitter-base voltage
Collector current
E SEM ANG H
TC=25ae
Open emitter
Open base
OND IC
CONDITIONS
TOR UC
VALUE 160 160 5 15 4 150 150 -55~150
UNIT V V V A A W ae ae
Open collector
Base current Collector power dissipation Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=5A ;IB=0.5A VCB=160V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IE=-2A ; VCE=12V 50 MIN 160
2SC2921
SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE Cob fT
TYP.
MAX
UNIT V
2.0 100 100 |I |I
V A A
200 60
pF MHz
Switching times ton ts tf Turn-on time
Fall time
Storage time

Y
hFE classifications O 50-100 P
IN
ANG CH
90-180
MIC E SE
IC=5A;RL=12| IB1=-IB2=0.5A VCC=60V
DUC ON
0.20
1.50 0.35
TOR
|I |I
s |I s s
70-140
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2921

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2921

CHA IN
E SEM NG
OND IC
TOR UC
4


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